Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory

A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM), comprising:

• a magnetic free layer, having a variable magnetization direction;
• an insulating tunnel barrier located adjacent to the free layer;
• a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy;
• and
• one or more of:
• a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer, wherein the spacer layer is located between the reference layer and the tunnel barrier, and wherein the dusting layer is located between the spacer layer and the tunnel barrier;
• a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer, wherein the fixed layer and the second fixed magnetic layer are anti-parallely coupled through the SAF spacer;
• and
• a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.