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US 2012/0267723 A1Published application
Semiconductor device with buried bit lines and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSu-Young KIM
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical gates each configured to surround each active pillar; and a plurality of word lines configured to couple neighboring vertical gates with each other.
Claims8
A semiconductor device, comprising:
- a semiconductor substrate configured to include a plurality of trenches therein;
- a plurality of buried bit lines each configured to fill a portion of each trench;
- a plurality of active pillars each formed in an upper portion of each buried bit line;
- a plurality of vertical gates each configured to surround each active pillar;
- and
- a plurality of word lines configured to couple neighboring vertical gates with each other.
3 more elements
8-19. (canceled)
Dependencies are inferred from the claim text.