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US 2012/0267716 A1Published application
High voltage metal oxide semiconductor device with low on-state resistance
AssigneeUnited Microelectronics Corp.
InventorsChing-Hung KAO, Sheng-Hsiong Yang
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Abstract
A high voltage metal oxide semiconductor device with low on-state resistance is provided. A multi-segment isolation structure is arranged under a gate structure and beside a drift region for blocking the current from directly entering the drift region. Due to the multi-segment isolation structure, the path length from the body region to the drift region is increased. Consequently, as the breakdown voltage applied to the gate structure is increased, the on-state resistance is reduced.
Claims19
A high voltage metal oxide semiconductor device, comprising:
- a substrate;
- a multi-segment first isolation structure formed in the substrate, and comprising plural segments;
- a source region and a drain region respectively arranged at bilateral sides of the multi-segment first isolation structure;
- and
- a gate structure disposed over at least a portion of the multi-segment first isolation structure.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a multi-segment first isolation structure formed under a gate structure, and comprising plural segments, wherein the multi-segment first isolation structure is partially overlapped with the gate structure;
- and
- plural second isolation structures arranged at bilateral sides of the substrate.
1 more element
Dependencies are inferred from the claim text.