Termination structure for power devices
OwnerYung-Fa Lin, Shou-Yi Hsu +4inventors
InventorsYung-Fa Lin, Shou-Yi Hsu, Meng-Wei Wu, Main-Gwo Chen, Jing-Qing Chan, Yi-Chun Shih
Life of this patent
Estimating the term…
Abstract
A termination structure for a power MOSFET device includes a substrate, an epitaxial layer on the substrate, a trench in the epitaxial layer, a first insulating layer within the trench, a first conductive layer atop the first insulating layer, and a column doping region in the epitaxial layer and in direct contact with the first conductive layer. The first conductive layer is in direct contact with the first insulating layer and is substantially level with a top surface of the epitaxial layer. The first conductive layer comprises polysilicon, titanium, titanium nitride or aluminum.
Claims11
A termination structure for power devices, comprising:
- a substrate of a first conductivity type;
- an epitaxial layer of the first conductivity type on the substrate;
- a trench in the epitaxial layer of the first conductivity type;
- a first insulating layer within the trench;
- a first conductive layer atop the first insulating layer within the trench;
- and
- a column doping region of a second conductivity type disposed in the epitaxial layer of the first conductivity type adjacent to the trench, the column doping region being in direct contact with the first conductive layer.
Dependencies are inferred from the claim text.