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US 2012/0267705 A1Published application
Semiconductor device and manufacturing method of the same
AssigneeSony Corporation
InventorHideki Mori
Life of this patent
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Abstract
A method of making a semiconductor device having an ESD protection element which can achieve compatibility between high drain-to-backgate withstand voltage and ESD protection of DMOSFET gates.
Claims17
A semiconductor device comprising:
- a transistor region;
- and
- a protection element region,
- wherein the transistor region includes,
- a drain region which includes a first conductivity type semiconductor layer;
- a first region formed over the drain region;
- a second region which includes a second conductivity type semiconductor region formed in the first region;
- a gate insulating layer formed over the surfaces of the first region and second region;
- a gate electrode formed over the gate insulating layer to straddle a part of the surface of the second region and a part of the surface of the first region;
- a source region which includes a first conductivity type semiconductor region;
- and
- a channel region formed over a part of the surface of the second region.
9 more elements
Dependencies are inferred from the claim text.