Transistor arrangement with a mosfet
AssigneeInfineon Technologies AG
InventorsRalf Siemieniec, Hans-Joachim Schulze
Life of this patent
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Abstract
A semiconductor arrangement includes a MOSFET having a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region. The semiconductor arrangement further includes a normally-off JFET having a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.
Claims27
A semiconductor arrangement, comprising:
- a MOSFET comprising a source region, a drift region and a drain region of a first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a source electrode contacting the source region and the body region;
- and
- a normally-off JFET comprising a channel region of the first conductivity type that is coupled between the source electrode and the drift region and extends adjacent the body region so that a p-n junction is formed between the body region and the channel region.
A MOSFET, comprising:
- a semiconductor body with a source region, a drift region and a drain region of a first conductivity type, and a body region of a second conductivity type arranged between the source region and the drift region;
- a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric;
- a source electrode contacting the source region and the body region;
- and
- a channel region of the first conductivity type extending from the source electrode to the drift region adjacent to the body region, so that a p-n junction is formed between the body region and the channel region, wherein a doping concentration of the body region and a width of the channel region is such that an intrinsic depletion zone pinches off the channel region when the MOSFET is in an unbiased state.
Dependencies are inferred from the claim text.