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US 2012/0267692 A1Published application
X-y address type solid state image pickup device and method of producing the same
AssigneeSony Corporation
InventorsRyoji Suzuki, Keiji Mabuchi, Tomonori Mori
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
Claims14
A solid state image pickup device comprising:
- a semiconductor layer having a photo-electric conversion device;
- a wiring layer over a first surface side of the semiconductor layer, the first surface being opposite to a light-receiving surface side;
- a backside layer of a first conductivity type extending into the semiconductor layer from the light-receiving surface side;
- a well of the first conductivity type extending into the semiconductor layer from the first surface side, at least a portion of the well extending to the backside layer;
- and
- a photo-electric conversion region surrounded by the well and formed in the semiconductor layer adjacent to the backside layer.
3 more elements
Dependencies are inferred from the claim text.