Back to results
US 2012/0267691 A1Published application
X-y address type solid state image pickup device and method of producing the same
AssigneeSony Corporation
InventorsRyoji Suzuki, Keiji Mabuchi, Tomonori Mori
Life of this patent
Estimating the term…
Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
Claims14
An imaging device comprising:
- a semiconductor layer having a photo-electric conversion device;
- a wiring layer over a first surface side of the semiconductor layer, the first surface being opposite to a light-receiving surface side;
- a first layer of a first conductivity type formed in a surface layer of the first surface side in the semiconductor layer;
- a photo-electric conversion region of a second conductivity type formed in the semiconductor layer;
- and
- a well of the first conductivity type adjacent to the photo-electric conversion region, the well being connected to the first layer.
3 more elements
Dependencies are inferred from the claim text.