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US 2012/0267677 A1Published application
Semiconductor light-emitting device
AssigneeLG Innotek Co., Ltd.
InventorJung Hyeok BAE
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Abstract
Embodiments relate to a semiconductor light-emitting structure. The semiconductor light-emitting structure according to embodiments comprises a plurality of compound semiconductor layers; a multi-layered transparent layer on the light emitting structure comprising plurality of compound semiconductor layers and a metal layer between the transparent layers; and an electrode electrically connected to the metal layer.
Claims19
A semiconductor light-emitting device, comprising:
- a substrate;
- a light emitting structure on the substrate, the light emitting structure comprising a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
- a transparent electrode layer on the second conductive semiconductor layer;
- a metal layer disposed on a top surface the transparent electrode layer and the top surface of the transparent electrode layer;
- a transparent layer disposed on a top surface of the metal layer and physically contacted with the top surface of the metal layer;
- and
- an electrode electrically connected to the metal layer and physically contacted with a portion of the metal layer,
- wherein the transparent layer has a hole and a portion of the electrode is disposed in the hole.
5 more elements
A semiconductor light-emitting device, comprising:
- a substrate;
- a light emitting structure on the substrate, the light emitting structure comprising a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
- a transparent electrode layer on the second conductive semiconductor layer;
- a metal layer disposed on a top surface the transparent electrode layer and the top surface of the transparent electrode layer;
- a transparent layer disposed on a top surface of the metal layer and physically contacted with the top surface of the metal layer;
- and
- a first electrode disposed on a top surface of the first conductive semiconductor layer;
- and
- a second electrode physically contacted with top surface of the metal layer,
- wherein the transparent layer has a hole and a portion of the electrode is disposed in the hole,
- wherein the light emitting structure includes a nitride-based material,
- wherein the hole has a width equal to or wider than that of the top surface of the second electrode.
9 more elements
Dependencies are inferred from the claim text.