US 2012/0267673 A1 · SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE STRUCTURE AND LIGHT-EMITTING DEVICE

Abstract

It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.

Claims20

Dependent claims

A semiconductor light-emitting element comprising:

a first semiconductor layer that has a first conduction type;
a light-emitting layer that emits light by current flow and is laminated on the first semiconductor layer;
a second semiconductor layer that has a second conduction type and is laminated on the light-emitting layer;
a conductive layer that has conductivity and is laminated on the second semiconductor layer;
a first metal layer that is composed of a metallic material containing Au and is laminated on the conductive layer;
and
a second metal layer that is composed of a metallic material containing Au and having a hardness lower than a hardness of the metallic material composing the first metal layer, the second metal layer being laminated on the first metal layer so that a surface thereof opposite to another surface contacting the first metal layer is exposed to outside.

4 more elements

A light-emitting device comprising:

a semiconductor light-emitting element including:
a first semiconductor layer that has a first conduction type;
a light-emitting layer that emits light by current flow and is laminated on the first semiconductor layer;
a second semiconductor layer that has a second conduction type and is laminated on the light-emitting layer;
a conductive layer that has conductivity and is laminated on the second semiconductor layer;
a first metal layer that is composed of a metallic material containing Au and is laminated on the conductive layer;
and
a second metal layer that is composed of a metallic material containing Au and having a hardness lower than a hardness of the metallic material composing the first metal layer, the second metal layer being laminated on the first metal layer so that a surface thereof opposite to another surface contacting the first metal layer is exposed to outside;
a bonding wire bonded to the second metal layer of the semiconductor light-emitting element;
and
an electrical power supply member that supplies electrical power to the semiconductor light-emitting element through the bonding wire.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor light-emitting element, electrode structure and light-emitting device

Life of this patent

Semiconductor light-emitting element, electrode structure and light-emitting device

Life of this patent

Abstract

Claims20