Semiconductor Light-Emitting Device
AssigneeSemicon Light Co., Ltd.
InventorSoo Kun Jeon
Life of this patent
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Abstract
The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.
Claims17
A semiconductor light-emitting device, comprising:
- a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different than the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes;
- a first electrode disposed on the second semiconductor layer;
- a high-resistance body interposed between the second semiconductor layer and the first electrode;
- and
- a light-transmitting conductive film covering the second semiconductor layer and the high-resistance body, electrically connecting the second semiconductor layer to the first electrode, and having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.
Dependencies are inferred from the claim text.