Nitride-based semiconductor light-emitting device and method for fabricating the same
AssigneePanasonic Corporation
InventorsSongbaek CHOE, Naomi ANZUE, Ryou KATO, Toshiya YOKOGAWA
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Abstract
A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure (20) including a p-type AldGaeN layer (25) having an m-plane as a growing plane, and a step (b) of forming an Ag electrode (30) so as to be in contact with a growing plane (13) of the p-type AldGaeN layer (25). The step (b) includes a step (b1) of forming the Ag electrode (30) having a thickness in the range of 200 nm or more to 1,000 nm or less, and a step (b2) of heating the Ag electrode (30) to a temperature in the range of 400° C. or more to 600° C. or less.
Claims16
A method for fabricating a nitride-based light-emitting device, comprising:
- a step (a) of forming a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
- and
- a step (b) of forming an Ag electrode so as to be in contact with the growing plane of the p-type semiconductor region,
- wherein the step (b) includes:
- a step (b1) of forming the Ag electrode having a thickness in a range of 200 nm or more to 1,000 nm or less;
- and
- a step (b2) of heating the Ag electrode to a temperature in a range of 400° C. or more to 600° C. or less.
A nitride-based semiconductor light-emitting device, comprising:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
- and
- an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region,
- wherein the Ag electrode has a thickness in a range of 200 nm or more to 1,000 nm or less, and
- wherein an integral intensity ratio of X-ray intensities on a (111) plane and on a (200) plane on the growing plane of the Ag electrode is in a range of 20 or more to 100 or less.
A nitride-based semiconductor light-emitting device, comprising:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
- and
- an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region,
- wherein the Ag electrode has a thickness in a range of 200 nm or more to 1,000 nm or less, and
- wherein a peak intensity ratio of X-ray intensities on a (111) plane and on a (200) plane on the growing plane of the Ag electrode is in a range of 30 or more to 150 or less.
A light source, comprising:
- a nitride-based semiconductor light-emitting device;
- and
- a wavelength conversion section containing a fluorescent substance for converting a wavelength of light emitted from the nitride-based semiconductor light-emitting device,
- wherein the nitride-based semiconductor light-emitting device includes:
- a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
- and
- an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region,
- wherein the Ag electrode has a thickness in a range of 200 nm or more to 1,000 nm or less, and
- wherein an integral intensity ratio of X-ray intensities on a (111) plane and on a (200) plane on the growing plane of the Ag electrode is in a range of 20 or more to 100 or less.
Dependencies are inferred from the claim text.