Light-emitting diode chip

A method for producing a light-emitting diode chip comprising the steps of:

• providing a carrier assemblage of carrier elements;
• providing a semiconductor assemblage of semiconductor bodies;
• connecting the carrier assemblage (500) and the semiconductor assemblage (13) by means of a connecting material to form an assemblage;
• introducing at least one trench into each semiconductor body, wherein parts of the semiconductor body are removed in the region of the trench and the trench subdivides the semiconductor body into a first and a second region;
• and
• singulating the assemblage composed of carrier assemblage and semiconductor assemblage outside the first region and the trench through the assemblage into at least one light-emitting diode chip along a separating line.

A light-emitting diode chip, comprising:

• a semiconductor body having a first and a second region;
• an active zone within the semiconductor body, which active zone, during the operation of the light-emitting diode chip, emits electromagnetic radiation through a radiation coupling-out area formed at least in places by a first main area of the semiconductor body;
• and
• at least one trench in the semiconductor body, wherein parts of the semiconductor body are removed in the region of the trench,
• wherein the at least one trench extends at least as far as the active zone,
• wherein the at least one trench completely surrounds the first region in a lateral direction,
• wherein the second region completely surrounds the at least one trench and the first region in a lateral direction,
• wherein an area of the semiconductor body which lies opposite the first main area of the light-emitting diode chip is provided with a reflector layer,
• wherein the light-emitting diode chip comprises a carrier element and the reflector layer is arranged between the carrier element and the semiconductor body, wherein the semiconductor body is fixed to the carrier element by means of a connecting material,
• wherein all side areas and a base area of the at least one trench are covered completely by a passivation layer,
• wherein the at least one trench extends through the reflector layer, and
• wherein the connecting material is in direct contact with the passivation layer in the regions of the light-emitting diode chip which have been removed from the reflector layer.