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US 2012/0267658 A1Published application
Large-area light-emitting device and method for fabricating the same
AssigneeInvenlux Corporation
InventorsJianping Zhang, Chunhui Yan
Life of this patent
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Abstract
A III-nitride light emitting device having a substrate with a conductive grid made of conductive lines formed thereon. An active-region is sandwiched between an n-type layer and a p-type layer forming an LED structure, and the conductive grid is in ohmic contact with the n-type layer. Also provided is a method for fabricating the same.
Claims29
A III-nitride light emitting device, comprising
- a substrate;
- a conductive grid made of conductive lines formed on the substrate, wherein the conductive grid has a separation distance between the conductive lines in the range of 10-150 μm, a thickness of the conductive lines in the range of 0.5-2 μm, and a width of the conductive lines in the range of 5-15 μm;
- an n-type layer formed on the substrate and the conductive grid, wherein the n-type layer is in ohmic contact with the conductive grid;
- a p-type layer;
- and
- an active-region sandwiched between the n-type layer and the p-type layer.
3 more elements
A wafer substrate for III-nitride light emitting device, comprising
- a substrate;
- and
- a conductive grid made of conductive lines formed on the substrate, wherein the conductive grid has a separation distance between the conductive lines in the range of 10-150 μm, a thickness of the conductive lines in the range of 0.5-2 μm, and a width of the conductive lines in the range of 5-15 μm.
A Method for fabricating III-nitride light emitting device, comprising
- providing a substrate or a template comprising an template layer epitaxially formed on the substrate;
- forming a conductive grid made of conductive lines on the substrate or the template, wherein the conductive grid has a separation distance between the conductive lines in the range of 10-150 μm, a thickness of the conductive lines in the range of 0.5-2 μm, and a width of the conductive lines in the range of 5-15 μm;
- forming an n-type layer on the substrate or the template and the conductive grid, wherein the n-type layer is in ohmic contact with the conductive grid;
- forming an active-region on the n-type layer;
- and
- forming a p-type layer on the active-region.
3 more elements
Dependencies are inferred from the claim text.