Epitaxial wafer for light emitting diode, light emitting diode chip and methods for manufacturing the same

An epitaxial wafer for a light emitting diode, said epitaxial wafer comprising:

• a substrate;
• a first LED epitaxial structure formed on a first surface of the substrate, in which the first LED epitaxial structure comprises:
• a first n-type semiconductor layer,
• a first light emitting layer,
• a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer,
• a first p-type semiconductor layer, and
• a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer;
• and
• a second LED epitaxial structure formed on a second surface of the substrate.

A method for manufacturing an LED chip, said method comprising:

• providing a substrate;
• forming a first LED epitaxial structure on a first surface of the substrate, wherein the first LED epitaxial structure comprises:
• a first n-type semiconductor layer,
• a first light emitting layer,
• a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer,
• a first p-type semiconductor layer, and
• a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer;
• forming a second LED epitaxial structure on a second surface of the substrate;
• forming a first n-type electrode and a first p-type electrode on the first LED epitaxial structure;
• forming a second n-type electrode and a second p-type electrode on the second LED epitaxial structure;
• bonding one of the first LED epitaxial structure and the second LED epitaxial structure to a circuit base board;
• and
• bonding the other of the first LED epitaxial structure and the second LED epitaxial structure to a heat conduction base board.

An LED chip, comprising:

• a substrate;
• a first LED epitaxial structure formed on a first surface of the substrate, wherein the first LED epitaxial structure comprises:
• a first n-type semiconductor layer,
• a first light emitting layer,
• a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer,
• a first p-type semiconductor layer, and
• a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer;
• a second LED epitaxial structure formed on a second surface of the substrate;
• a first n-type electrode and a first p-type electrode formed on the first LED epitaxial structure,
• a second n-type electrode and a second p-type electrode formed on the second LED epitaxial structure;
• a circuit base board to which one of the first LED epitaxial structure and the second LED epitaxial structure is bonded, and
• a heat conduction base board to which the other of the first LED epitaxial structure and the second LED epitaxial structure is bonded.