Semiconductor heterostructure diodes
AssigneeTransphorm Inc.
InventorsYifeng Wu, Umesh Mishra, Primit Parikh, Ilan Ben-Yaacov
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Abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Claims17
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, the second III-N material layer being compositionally different from the first III-N material layer, wherein the first and second III-N materials are part of a III-N stack, and a 2 DEG channel is in the second III-N material layer adjacent to the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer;
- and
- a first terminal and a second terminal;
- wherein
- the first and second III-N material layers are N-polar or nitrogen-terminated semi-polar material;
- the first terminal is an anode comprising a Schottky contact with an N-face of the III-N stack;
- and
- the second terminal is a single cathode in ohmic contact with the 2 DEG channel.
A diode comprising a III-N semiconductor material, an anode Schottky contact, and a cathode contact, wherein a Schottky barrier height of the anode contact is not substantially reduced when the diode is reverse biased as compared to when the anode and cathode contacts are at the same voltage.
A diode, comprising:
- a first III-N material layer;
- a second III-N material layer on the first III-N material layer, the second III-N material layer having a thickness, wherein the first and second III-N materials are part of a III-N stack, a 2 DEG channel is in the second III-N material layer adjacent to the first III-N material layer because of a compositional difference between the first III-N material layer and the second III-N material layer, and the first and second III-N material layers are N-polar or nitrogen-terminated semi-polar material;
- and
- two terminals, wherein one terminal is an anode which extends through an entirety of the thickness of the second III-N material layer to contact the first III-N material layer and has extending portions that are on an N-face or nitrogen-terminated semi-polar face of the III-N stack, and one terminal is a single cathode in ohmic contact with the 2 DEG channel.
Dependencies are inferred from the claim text.