Nitride semiconductor device and method for manufacturing the same

A nitride semiconductor device, comprising:

• a nitride semiconductor layer that is disposed over a substrate and has a two dimensional electron gas (2DEG) channel formed therein;
• a drain electrode that is ohmic-contacted with the nitride semiconductor layer;
• a source electrode that is disposed to be spaced apart from the drain electrode, includes a plurality of patterned protrusion portions protruded to the drain electrode direction, is Schottky-contacted with the nitride semiconductor layer, and includes an ohmic pattern ohmic-contacted with the nitride semiconductor layer on a lower end thereof;
• a dielectric layer that is disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode, wherein the portion of the source electrode includes the patterned protrusion portions;
• and
• a gate electrode that includes a first region formed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode and a second region disposed on the dielectric layer between the drain electrode and the source electrode so as to be spaced apart from the drain electrode.

A method for manufacturing a nitride semiconductor device, comprising:

• generating a nitride semiconductor layer that is disposed over a substrate and has a two dimensional electron gas (2DEG) channel formed therein;
• forming a drain electrode that is ohmic-contacted with the nitride semiconductor layer and forming a source electrode that is disposed to be spaced apart from the drain electrode, includes a plurality of patterned protrusion portions protruded to the drain electrode direction, is Schottky-contacted with the nitride semiconductor layer, and includes an ohmic pattern ohmic-contacted with the nitride semiconductor layer on a lower end thereof;
• forming a dielectric layer that is disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode, wherein the portion of the source electrode includes the patterned protrusion portions;
• and
• forming a gate electrode on the dielectric layer so as to be spaced apart from the drain electrode, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode.

A method for manufacturing a nitride semiconductor device, comprising:

• generating a nitride semiconductor layer that is disposed over a substrate and has a two dimensional electron gas (2DEG) channel formed therein;
• forming a drain electrode that is ohmic-contacted with the nitride semiconductor layer and forming a source electrode that is disposed to be spaced apart from the drain electrode, includes a plurality of patterned protrusion portions protruded to the drain electrode direction, is Schottky-contacted with the nitride semiconductor layer, and includes an ohmic pattern ohmic-contacted with the nitride semiconductor layer on a lower end thereof;
• forming a dielectric layer that is disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode, wherein the portion of the source electrode includes the patterned protrusion portions;
• and
• forming a gate electrode that includes a first region formed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode and a second region disposed on the dielectric layer between the drain electrode and the source electrode so as to be spaced apart from the drain electrode.