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US 2012/0267633 A1Published application
Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
AssigneeSony Corporation
InventorsNaoki Hayashi, Toshiaki Arai
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Abstract
A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.
Claims18
A thin film transistor comprising:
- a gate electrode over a substrate;
- a gate insulating layer;
- an insulating layer made of a metal oxide on the gate insulating layer;
- a channel layer over the gate insulating layer;
- and
- source and drain electrodes on the channel layer.
3 more elements
A display comprising:
- a thin film transistor;
- and
- a display portion to be driven by a driving signal through the thin film transistor,
- wherein the thin film transistor comprises
- a gate electrode over a substrate,
- a gate insulating layer,
- an insulating layer made of a metal oxide on the gate insulating layer,
- a channel layer (19a) over the gate insulating layer, and
- source and drain electrodes on the channel layer.
6 more elements
Dependencies are inferred from the claim text.