Oxide material and semiconductor device

A semiconductor device comprising:

• a gate electrode;
• a gate insulating film in contact with the gate electrode;
• and
• an oxide semiconductor film comprising two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane, each of the crystalline portions being c-axis aligned, having at least one of a triangular atomic arrangement and a hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, and comprising indium, tin and zinc,
• wherein the oxide semiconductor film is in contact with the gate insulating film.

A semiconductor device comprising:

• a gate electrode;
• a gate insulating film in contact with the gate electrode;
• and
• an oxide semiconductor film comprising two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane, each of the crystalline portions being c-axis aligned, having at least one of a triangular atomic arrangement and a hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, and being expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number),
• wherein the oxide semiconductor film is in contact with the gate insulating film.