Epitaxiay wafer, method for manufacturing the same and method for manufacturing led chip
AssigneesShenzhen BYD Auto R&D Company Limited, BYD Company Limited
InventorsWang ZHANG, Xilin Su, Chunlin Xie, Hongpo Hu
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Abstract
A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.
Claims20
A method for manufacturing an epitaxial wafer for a light emitting diode (LED), comprising:
- forming a back coating layer on a back surface of a substrate;
- forming a buffer layer on a top surface of the substrate;
- forming an N-type semiconductor layer on the buffer layer;
- forming a multi-quantum well layer on the N-type semiconductor layer;
- and
- forming a P-type semiconductor layer on the multi-quantum well layer.
A method for manufacturing an LED chip, comprising:
- forming a back coating layer on a back surface of a substrate;
- forming a buffer layer on a top surface of the substrate;
- forming an N-type semiconductor layer on the buffer layer;
- forming a multi-quantum well layer on the N-type semiconductor layer;
- forming a P-type semiconductor layer on the multi-quantum well layer;
- partially etching the P-type semiconductor layer and the multi-quantum well layer to expose a part of the N-type semiconductor layer;
- forming an N-type electrode on the exposed part of the N-type semiconductor layer;
- forming a P-type electrode on the P-type semiconductor layer;
- and
- thinning the back surface of the substrate to remove the back coating layer and a part of the substrate with a predetermined thickness.
An epitaxial wafer for an LED, comprising:
- a substrate;
- a back coating layer formed on a back surface of the substrate;
- a buffer layer formed on a top surface of the substrate;
- an N-type semiconductor layer formed on the buffer layer;
- a multi-quantum well layer formed on the N-type semiconductor layer;
- and
- a P-type semiconductor layer formed on the multi-quantum well layer.
Dependencies are inferred from the claim text.