Loading patent…
AssigneeKorea Advanced Institute of Science and Technology
InventorsSang Ouk Kim, Ji Sun Park, Ju Min Lee, Myoung Hoon Song
Estimating the term…
Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.
A method for controlling a device including a selective electron or hole transporting layer, the method comprising selectively controlling mobility of electrons or holes by using an N-type or P-type doped carbon-nanostructure.
A light emitting device comprising a selective electron or hole transporting layer, wherein the selective electron or hole transporting layer includes triad- or pentad-doped carbon-nanostructure.
A light emitting device comprising an electron transport layer and a hole transport layer, wherein at least one of the electron transport layer and the hole transport layer includes a nitrogen-doped carbon nanotube or a boron-doped carbon nanotube.
A light emitting device comprising:
A light emitting device comprising:
Dependencies are inferred from the claim text.