Phase change memory cells with surfactant layers
AssigneeInternational Business Machines Corporation
InventorsChung H. Lam, Alejandro G. Schrott
Life of this patent
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Abstract
An example embodiment is a phase change memory cell including a bottom electrode and phase change material carried within a via above the bottom electrode. A surfactant layer is deposited above the bottom electrode. The surfactant layer includes a surfactant configured to lower an interfacial force between the phase change material and the via surface.
Claims19
A method for fabricating a memory cell including phase change material, the method comprising:
- forming a bottom electrode within a substrate;
- forming a via above the bottom electrode;
- depositing a surfactant layer above the bottom electrode, the surfactant layer including a surfactant configured to lower an interfacial force between the phase change material and the via surface;
- depositing the phase change material within the via.
A phase change memory cell comprising:
- a bottom electrode;
- phase change material carried within a via above the bottom electrode;
- and
- a surfactant layer above the bottom electrode, the surfactant layer including a surfactant configured to lower an interfacial force between the phase change material and the via surface.
The phase change memory cell, wherein the via has a substantially T-shaped cross section.
An array of phase change memory cells, each phase change memory cell in the array comprising:
- a bottom electrode;
- phase change material carried within a via above the bottom electrode;
- and
- a surfactant layer above the bottom electrode, the surfactant layer including a surfactant configured to lower an interfacial force between the phase change material and the via surface.
Dependencies are inferred from the claim text.