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US 2012/0267600 A1Published application
Memory cell repair
AssigneeMicron Technology, Inc.
InventorScott E. Sills
Life of this patent
Estimating the term…
Abstract
A repairable memory cell in accordance with one or more embodiments of the present disclosure includes a storage element positioned between a first and a second electrode, and a repair element positioned between the storage element and at least one of the first electrode and the second electrode.
Claims32
A repairable memory cell, comprising:
- a storage element positioned between a first and a second electrode;
- and
- a repair element positioned between the storage element and at least one of the first electrode and the second electrode.
A repairable memory cell, comprising:
- a storage element positioned between a first and a second electrode;
- a conductive contact positioned between the second electrode and the storage element;
- and
- a repair element positioned between the conductive contact and the second electrode.
1 more element
A method of forming a repairable memory cell, comprising:
- forming a storage element between a first and a second electrode;
- and
- forming a repair element between the storage element and at least one of the first and the second electrode;
- wherein the repair element is configured to permanently switch a state of the storage element from a first state to a second state responsive to a threshold current density through the repair element.
1 more element
A memory array, comprising:
- a first number of conductive lines;
- a second number of conductive lines substantially perpendicular to the first number of conductive lines;
- a storage element positioned at each of a number of intersections of the first number and the second number of conductive lines;
- and
- a repair element positioned between the storage element and at least one of the first number and the second number of conductive lines at one or more of the number of intersections.
2 more elements
Dependencies are inferred from the claim text.