Resistive ram devices and methods
AssigneeMicron Technology, Inc.
InventorsJoseph N. Greeley, John A. Smythe, III
Life of this patent
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Abstract
The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.
Claims26
A resistive random access memory (RRAM) device formed by the method comprising:
- forming a first oxide material over a substrate;
- forming a silicon nitride material over the first oxide material;
- forming a second oxide material over a portion of the silicon nitride material;
- forming a first electrode over a different portion of the silicon nitride material;
- forming a resistive element over the first electrode, where forming the resistive element includes:
- forming an insulative material over the second oxide material and the first electrode;
- forming a via in the insulative material over the first electrode;
- filling the via with a metal material;
- and
- selectively treating a portion of the metal material within the via to create a metal-metal oxide interface within the via;
- and
- forming a second electrode over the resistive element and the insulative material.
A resistive random access memory (RRAM) device, comprising:
- a first electrode;
- a second electrode separated from the first electrode by a semiconductor insulating material;
- and
- a resistive element contained within a via formed in the semiconductor insulating material, the via extending between the first and the second electrode, the resistive element including a first portion and a second portion, the first portion being a material including a metal and the second portion being an oxide of the material including the metal formed by selectively oxidizing the material including the metal within the via to form a metal-metal oxide interface at a location that enables the resistive element to be switched between more than one resistance state that are different from one another by at least two orders of magnitude.
A resistive random access memory (RRAM) device, comprising:
- a first electrode;
- a second electrode separated from the first electrode by a semiconductor insulating material having a via therein, the via extending between the first and the second electrode;
- and
- a resistive element formed at least within the via, and including a first portion and a second portion, the first portion being a material including a metal material the second portion being an oxide of the material including the metal formed by selectively oxidizing the material including the metal within the via to form a metal-metal oxide interface at a location that enables the resistive element to be switched between more than one resistance state that are different from one another by at least two orders of magnitude.
Dependencies are inferred from the claim text.