Film deposition apparatus and film deposition method

A film deposition method comprising steps of:

• transferring a substrate having a pattern including a concave part therein into a vacuum chamber;
• supplying a first reaction gas to the substrate in the vacuum chamber from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate;
• supplying a second reaction gas that reacts with the first reaction gas to the substrate in the vacuum chamber from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and thus forming a reaction product of the first reaction gas and the second reaction gas on the substrate;
• and
• supplying an alteration gas and an etching gas to the substrate in the vacuum chamber through an activated gas supplying part that is capable of activating the alteration gas, thereby altering properties of the reaction product and etching the reaction product on the substrate.

A film deposition apparatus comprising:

• a turntable, capable of rotation, provided in a vacuum chamber, wherein the turntable includes a substrate receiving part in which a substrate is placed;
• a first reaction gas supplying part that supplies a first reaction gas to the substrate placed in the substrate receiving part, thereby allowing the first reaction gas to be adsorbed on the substrate;
• a second reaction gas supplying part that is provided away from the first reaction gas supplying part in a circumferential direction of the turntable and supplies a second reaction gas to the substrate placed in the substrate receiving part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and thus forming a reaction product of the first reaction gas and the second reaction gas on the substrate;
• an activated gas supplying part that is arranged between the first reaction gas supplying part and the second reaction gas supplying part along the circumferential direction of the turntable, and activates an alteration gas and an etching gas thereby supplying the activated alteration gas and the etching gas to the substrate placed in the substrate receiving part.