Film deposition method and film deposition apparatus
AssigneeTokyo Electron Limited
InventorsAkinobu KAKIMOTO, Satoshi Takagi, Toshiyuki Ikeuchi, Katsuhiko Komori, Kazuhide Hasebe
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Abstract
A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
Claims8
A film deposition method comprising steps of:
- loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves;
- depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber;
- etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber;
- and
- alternately repeating the step of depositing and the step of etching.
A film deposition apparatus comprising:
- a substrate supporting member that supports plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves;
- the reaction chamber that has a cylindrical shape with a closed top and an open bottom, the reaction chamber accommodating the substrate supporting member;
- a silicon-containing gas supplying part that supplies a silicon-containing gas to the plural substrates supported by the substrate supporting member;
- an oxygen-containing gas supplying part that supplies an oxygen-containing gas to the plural substrates supported by the substrate supporting member;
- a fluorine-containing gas supplying part that supplies a fluorine-containing gas to the plural substrates supported by the substrate supporting member;
- an ammonia gas supplying part that supplies an ammonia gas to the plural substrates supported by the substrate supporting member;
- and
- a controlling part that controls the silicon-containing gas supplying part, the oxygen-containing gas supplying part, the fluorine-containing gas supplying part, and the ammonia-containing gas supplying part so that a silicon oxide film is deposited on the plural substrates by supplying the silicon-containing gas and the oxygen-containing gas to the reaction chamber, and the silicon oxide film deposited on the plural substrates is etched by supplying the fluorine-containing gas and the ammonia gas to the reaction chamber.
Dependencies are inferred from the claim text.