Side feed system for czochralski growth of silicon ingots
AssigneeGT Advanced CZ, LLC
InventorsWilliam L. Luter, Verlin A. Lauher, Dick S. Williams, Howard P. Zinschlag, Neil Middendorf
Life of this patent
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Abstract
A Czochralski growth system comprising a growth chamber, an isolation valve, a feed chamber containing feedstock, and a feeder is described. The isolation valve is disposed in at least one side wall of the growth chamber, and the feed chamber is vacuum sealed to the growth chamber through the isolation valve. The feeder is insertable into the growth chamber through the isolation valve and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.
Claims23
A Czochralski growth system, comprising:
- a growth chamber comprising a crucible, sidewalls, a top wall, a pedestal for supporting the crucible, and a pull mechanism for retractably supporting a seed for contacting a melt contained in the crucible;
- an isolation valve disposed in at least one side wall of the growth chamber;
- a feed chamber vacuum sealed to the growth chamber through the isolation valve and containing feedstock;
- and
- a feeder insertable into the growth chamber through the isolation valve to supply the feedstock into the growth chamber and removable from the growth chamber into the feed chamber and disposable in the growth chamber with the isolation valve closed.
Dependencies are inferred from the claim text.