Deposition Method
AssigneeSpp Technologies Co., Ltd.
InventorsMasayasu Hatashita, Akimitsu Oishi, Shoichi Murakami
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Abstract
A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.
Claims3
A deposition method of forming an oxide film on a surface of a substrate including side walls and a bottom surface of a hole or trench by a plasma generated from a deposition gas, the oxide film being formed to have a larger film thickness on the surface of the substrate excluding the side walls and the bottom surface of the hole or trench than on the bottom surface of the hole or trench so that a film thickness ratio of the film thickness of the oxide film formed on the surface of the substrate excluding the side walls and the bottom surface of the hole or trench to the film thickness of the oxide film formed on the bottom surface of the hole or trench becomes a predetermined ratio,
- the deposition method characterized in that
- when a target film thickness ratio is in a range enclosed by a straight line showing the relationship between the film thickness ratio and the aspect ratio of the hole or trench when using a first gas as the deposition gas and a straight line showing the relationship between the film thickness ratio and the aspect ratio of the hole or trench when using, as the deposition gas, a second gas with which a film thickness ratio larger than that obtained when using the first gas can be obtained, the oxide film with the target film thickness ratio is formed using the two gases, the first gas and the second gas.
Dependencies are inferred from the claim text.