US 2012/0258602 A1 · Method for Metal Deposition Using Hydrogen Plasma

Abstract

Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.

Claims20

Dependent claims

A method of depositing a metal layer on a semiconductor substrate comprising:

placing the substrate on a substrate support in a chamber of a reactor;
depositing a metal precursor layer on the substrate;
and
reducing the metal precursor layer to form a metal layer by exposing the metal precursor layer to a hydrogen plasma generated by alternating frequencies comprising a low frequency and a high frequency.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/082,968Filed 8 Apr 2011

Published

11 Oct 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

C23C 16/08
Characterised by the deposition of metallic material: from metal halides
C23C 16/45542
Use of plasma, radiation or electromagnetic fields: plasma being used non-continuously during the ALD reactions
H10D 64/0112
To Group IV semiconductors: using conductive layers comprising silicides
H10D 64/01316
Characterised by the conductor: the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al

Method for Metal Deposition Using Hydrogen Plasma

Life of this patent

Method for Metal Deposition Using Hydrogen Plasma

Life of this patent

Abstract

Claims20