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US 2012/0258600 A1Published application
Method and system for post-etch treatment of patterned substrate features
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsLudovic Godet, Christopher R. Hatem, Patrick M. Martin, Timothy J. Miller
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Abstract
A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
Claims20
A method of patterning a substrate, comprising:
- providing a set of patterned features on the substrate;
- exposing the set of patterned features to a dose of ions incident on the patterned features over a range of incident angles;
- and
- etching exposed portions of the patterned features.
1 more element
A method of patterning small features in a substrate, comprising:
- patterning a resist layer disposed on the substrate;
- etching the substrate while the patterned resist layer is in place to define patterned substrate features having sidewalls;
- removing the resist layer;
- exposing the patterned substrate features to ions at a set of incident angles to create altered portions of the sidewalls;
- and
- etching the altered portions of the sidewalls.
3 more elements
Dependencies are inferred from the claim text.