Spacer process for on pitch contacts and related structures

A method for semiconductor processing, comprising:

• providing a row of pillars and a block of selectively definable material extending along the row of pillars, wherein the block and the pillars are in contact and extend on a same level over a substrate, the pillars having a linear density Z;
• replacing the row of pillars with a mask having a row of holes, the mask and holes disposed on the level, the holes having a width of about 60 nm or less, at least some of the holes disposed at a location formerly occupied by a pillar, wherein the holes have a linear density at least about 1.5 times Z;
• and
• transferring a pattern defined by the holes to the substrate.

A method for semiconductor processing, comprising:

• providing a row of pillars and a block of masking material extending continuously along substantially an entire length of the row of pillars, the pillars having a linear density Z;
• replacing the row of pillars with a mask having a row of holes, the mask and holes disposed on the level, the holes having a width of about 60 nm or less, at least some of the holes disposed at a location formerly occupied by a pillar, wherein the holes have a linear density at least about 1.5 times Z;
• and
• transferring a pattern defined by the holes to the substrate.