On-Chip RF Shields with Backside Redistribution Lines

A method for forming a semiconductor integrated circuit chip, the method comprising:

• forming a first semiconductor component having a first active circuitry in a first region of a semiconductor substrate;
• forming a second semiconductor component having a second active circuitry in a second region of the semiconductor substrate, the first and the second semiconductor components sharing a common boundary, the first and the second semiconductor components being formed proximate a top surface of the semiconductor substrate than an opposite back surface of the semiconductor substrate;
• forming an insulating layer under the back surface of the semiconductor substrate;
• forming first metal lines under the insulating layer, the first metal lines being formed under the first semiconductor component and isolated from the semiconductor substrate by the insulating layer;
• forming second metal lines under the insulating layer, the second metal lines being formed under the second semiconductor component, the first and the second metal lines being part of a back side metallization layer;
• coupling the first metal lines to a ground potential node;
• and
• coupling the second metal lines to the second active circuitry.