US 2012/0258589 A1 · METHOD OF FABRICATING COAXIAL THROUGH-SILICON VIA

Abstract

A method of fabricating a through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage.

Claims19

Dependent claims

A method of forming an integrated (IC) co-axial through-silicon via (TSV) structure comprising:

forming on a substrate at least one TSV vertically down from a top surface of said substrate by etching an inner conductor of tubular shape leaving exposed a post made of the same material as said substrate, said inner conductor being separated from said post by a first dielectric;
and
etching an outer conductor of tubular shape concentric to said inner conductor separated from said inner conductor by a second insulator surrounding an outer surface of said inner conductor, said outer conductor being insulated from said substrate by said first insulator.

Dependencies are inferred from the claim text.

Facts

Application

13/495,092Filed 13 Jun 2012

Priority

28 Oct 2009

Published

11 Oct 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 20/023
Of interconnections within wafers or substrates: the interconnections being through-semiconductor vias
H10W 20/0245
The interconnections being through-semiconductor vias: comprising use of blind vias during the manufacture
H10W 20/0249
The interconnections being through-semiconductor vias: wherein the through-semiconductor via protrudes from backsides of the chips, wafers or…
H10W 20/20
Interconnections in chips, wafers or substrates: interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Method of fabricating coaxial through-silicon via

Life of this patent

Method of fabricating coaxial through-silicon via

Life of this patent

Abstract

Claims19