Self forming metal fluoride barriers for fluorinated low-k dielectrics
OwnerChristopher J. Jezewski, Daniel J. Zierath +1inventors
InventorsChristopher J. Jezewski, Daniel J. Zierath, Florian Gstrein
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Abstract
A device and method of forming fluoride metal barriers at an interface of a fluorinated low-K dielectric and Cu or Cu alloy interconnects is disclosed. The fluoride metal barriers may prevent interconnects from reacting with the fluorinated low-K dielectric. The method may include depositing a thin film of metal or metal alloy on the fluorinated low-K dielectric. The thin film may include a metal or metal alloying element that reacts with free fluorine and/or fluorine compounds from the fluorinated low-K dielectric to form fluoride metal barriers.
Claims16
A method comprising:
- depositing a thin film of metal or metal alloy on top of a fluorinated low-K dielectric on a substrate;
- and
- filling one or more features patterned on the fluorinated low-K dielectric to form one or more interconnects,
- wherein a metal fluoride barrier forms from interaction between the thin film and the fluorinated low-K dielectric, and further wherein the metal fluoride barrier is capable of preventing interaction between said one or more interconnects and the fluorinated low-K dielectric.
A method comprising:
- providing a patterned fluorinated low-K dielectric on a substrate;
- depositing a layer of metal or metal alloy on the patterned fluorinated low-K dielectric;
- filling at least a trench or via of the patterned fluorinated low-K dielectric with Cu or Cu alloy to form one or more interconnects;
- and
- annealing the layer of metal or metal alloy and the patterned fluorinated low-K dielectric, wherein said annealing causes self formation of a metal fluoride barrier at an interface between said one or more interconnects and the patterned fluorinated low-K dielectric.
16-20. (canceled)
Dependencies are inferred from the claim text.