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US 2012/0258585 A1Published application
Incorporating impurities using a discontinuous mask
AssigneeMicron Technology, Inc.
InventorJaydeb Goswami
Life of this patent
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Abstract
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities into a material using a discontinuous mask.
Claims26
A method of incorporating impurities into a material, comprising:
- forming a discontinuous mask over a particular material, leaving at least a portion of the particular material exposed;
- forming an impurity material in a discontinuous manner on the discontinuous mask and the exposed portion of the particular material;
- incorporating the impurity material formed on the exposed portion of the particular material into the particular material;
- and
- removing the discontinuous mask.
2 more elements
A method of incorporating metal into polysilicon, comprising:
- forming a discontinuous mask over the polysilicon, leaving at least a portion of the polysilicon exposed;
- forming metal nanodots on the discontinuous mask and the exposed portion of the polysilicon;
- incorporating the metal nanodots formed on the exposed portion of the polysilicon into the polysilicon;
- and
- removing the discontinuous mask.
2 more elements
A method of forming a memory cell, comprising:
- forming a first dielectric over a semiconductor;
- forming a charge storage structure over the first dielectric, wherein forming the charge storage structure comprises:
- forming a charge storage material over the first dielectric;
- forming a discontinuous mask over the charge storage material, leaving at least a portion of the charge storage material exposed;
- forming an impurity material in a discontinuous manner on the discontinuous mask and the exposed portion of the charge storage material;
- incorporating the impurity material formed on the exposed portion of the charge storage material into the charge storage material;
- and
- removing the discontinuous mask;
- forming a second dielectric over the charge storage structure;
- and
- forming a control gate over the second dielectric.
8 more elements
A method of forming a memory cell, comprising:
- forming a first dielectric over a semiconductor;
- forming a charge storage structure over the first dielectric, wherein forming the charge storage structure comprises:
- forming polysilicon over the first dielectric;
- forming a discontinuous mask over the polysilicon, leaving at least a portion of the polysilicon exposed;
- forming metal nanodots on the discontinuous mask and the exposed portion of the polysilicon;
- incorporating the metal nanodots formed on the exposed portion of the polysilicon into the polysilicon;
- and
- removing the discontinuous mask;
- forming a second dielectric over the charge storage structure;
- and
- forming a control gate over the second dielectric.
8 more elements
Dependencies are inferred from the claim text.