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US 2012/0258583 A1Published application
Method for epitaxial layer overgrowth
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsLudovic GODET, Morgan D. Evans, Christopher R. Hatem
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Abstract
Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
Claims20
A method of workpiece processing comprising:
- selectively implanting ions into a plurality of implanted regions in a workpiece, wherein said ions comprise oxygen, silicon, germanium, carbon, or nitrogen;
- annealing said workpiece such that said ions are incorporated into said implanted regions;
- and
- forming a compound semiconductor on said workpiece.
1 more element
A method of workpiece processing comprising:
- determining a width of an implanted region to compensate for shrinkage of said width during annealing;
- selectively implanting oxygen ions into a plurality of said implanted regions in a workpiece, each of said implanted regions having a box profile beginning at a surface of said workpiece and each of said implanted regions having said width, said workpiece comprising silicon;
- annealing said workpiece to form silicon oxide on said implanted regions;
- and
- forming a compound semiconductor on said workpiece.
2 more elements
A method of workpiece processing comprising:
- determining a width of an implanted region to compensate for shrinkage of said width during annealing;
- selectively implanting nitrogen ions into a plurality of implanted regions in a workpiece, each of said implanted regions having a box profile beginning at a surface of said workpiece and each of said implanted regions having said width, said workpiece comprising silicon;
- annealing said workpiece to form silicon nitride on said implanted regions;
- and
- forming a compound semiconductor on said workpiece.
2 more elements
Dependencies are inferred from the claim text.