Method and apparatus for selectively growing doped epitaxial film

A method for selectively growing a doped epitaxial film, comprising:

• a first step of forming a first thin film by epitaxial growth, while a source gas and a doping gas are supplied so that a dopant having a concentration exceeding 5×1019 atoms/cm3 is doped on a single crystal surface of a preheated substrate having the single crystal surface and a dielectric surface as a processing surface;
• a second step of supplying the source gas and the doping gas before a film is formed on the dielectric surface, the doping gas supplied so that the dopant concentration is not more than 1×1019 atoms/cm3, to form, by epitaxial growth, a second thin film doped with the dopant at lower concentration than the first thin film, on a surface of the first thin film;
• and
• an etching step of stopping supply of the source gas before a film is formed on the dielectric surface, and exposing the processing surface of the substrate to an etching gas with the second thin film as a mask, thereby removing a material adhering to the dielectric surface.