Mocvd fabrication of group iii-nitride materials using in-situ generated hydrazine or fragments there from
AssigneeApplied Materials, Inc.
InventorsKarl Brown, Kevin Griffin, David Bour, Olga Kryliouk
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Abstract
The metal-organic chemical vapor deposition (MOCVD) fabrication of group III-nitride materials using in-situ generated hydrazine or fragments there from is described. For example, a method of fabricating a group III-nitride material includes forming hydrazine in an in-situ process. The hydrazine, or fragments there from, is reacted with a group III precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. From the reacting, a group III-nitride layer is formed above a substrate.
Claims23
A method of fabricating a group III-nitride material, the method comprising:
- forming hydrazine in an in-situ process;
- reacting the hydrazine, or fragments there from, with a group III precursor in a metal-organic chemical vapor deposition (MOCVD) chamber;
- and
- forming, from the reacting, a group III-nitride layer above a substrate.
A process tool for fabricating a group III-nitride material, the process tool comprising:
- means to form hydrazine in an in-situ process;
- and
- a metal-organic chemical vapor deposition (MOCVD) chamber for reacting the hydrazine, or fragments there from, with a group III precursor.
Dependencies are inferred from the claim text.