Plasma-assisted mocvd fabrication of p-type group iii-nitride materials
AssigneeApplied Materials, Inc.
InventorsKarl Brown, Kevin Griffin, David Bour, Olga Kryliouk
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Abstract
The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
Claims21
A method of fabricating a p-type group III-nitride material, the method comprising:
- generating a nitrogen-based plasma;
- reacting nitrogen-containing species from the nitrogen-based plasma with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber;
- and
- forming, from the reacting, a group III-nitride layer including p-type dopants above a substrate.
A process tool for fabricating a p-type group III-nitride material, the process tool comprising:
- a plasma source for generating a nitrogen-based plasma;
- and
- a metal-organic chemical vapor deposition (MOCVD) chamber for reacting nitrogen-containing species from the nitrogen-based plasma with a group III precursor and a p-type dopant precursor.
Dependencies are inferred from the claim text.