Semiconductor device and manufacturing method thereof
AssigneeSanken Electric Co., Ltd.
InventorsHironori AOKI, Shuichi Kaneko
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an epitaxial layer having a first conduction type, a base layer formed adjacent and on the epitaxial layer and having an opposite second conduction type to the first conduction type, a source layer formed selectively on the base layer and having the first conduction type, a trench which passes through the base layer and the source layer and which reaches the epitaxial layer, an insulation film formed along an interior wall of the trench, a control electrode formed within the trench via the insulation film, and a semiconductor region formed along the bottom part of the trench at the epitaxial layer and having the first conduction type.
Claims5
A method of manufacturing a semiconductor device, the method comprising;
- forming a base layer by implanting second type conduction impurities into a first conduction type epitaxial layer using an ion implantation method;
- forming a source layer by implanting first type conduction impurities into the base layer by the ion implantation method;
- forming a trench to pass through the base layer and the source layer and to reach the epitaxial layer;
- forming a first oxide film within the trench;
- and
- forming a first conduction type semiconductor region by implanting first type conduction impurities using an ion implantation method into a bottom part of the trench after forming the first oxide film.
Dependencies are inferred from the claim text.