Manufacturing method of semiconductor device
AssigneeRenesas Electronics Corporation
InventorItaru KANNO
Life of this patent
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Abstract
A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1, GE2, GE3, and GE4 to thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regions 1A and 1B and the pMIS regions 1C and 1D to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.
Claims19
A manufacturing method of a semiconductor device, said semiconductor device comprising a first MISFET in a first region of a semiconductor substrate and a second MISFET in a second region of the semiconductor substrate, said manufacturing method comprising the steps of:
- (a) preparing the semiconductor substrate;
- (b) after the step (a), respectively forming a first gate structure for the first MISFET over the semiconductor substrate in the first region, and a second gate structure for the second MISFET over the semiconductor substrate in the second region;
- (c) after the step (b), forming a first material film over the semiconductor substrate so as to cover the first gate structure and the second gate structure;
- (d) after the step (c), forming a first mask layer covering the second region and exposing the first region, over the first material film;
- (e) after the step (d), performing first ion implantation on the semiconductor substrate in the first region using the first mask layer as an ion implantation blocking mask;
- (f) after the step (e), removing the first mask layer;
- (g) after the step (f), removing the first material film;
- (h) after the step (g), forming a second material film over the semiconductor substrate so as to cover the first gate structure and the second gate structure;
- (i) after the step (h), forming a second mask layer covering the first region and exposing the second region, over the second material film;
- (j) after the step (i), performing second ion implantation on the semiconductor substrate in the second region using the second mask layer as the ion implantation blocking mask;
- and
- (k) after the step (j), removing the second mask layer,
- wherein each of the first gate structure and the second gate structure includes a gate insulating film and a gate electrode formed over the gate insulating film, and
- wherein in the step (g), the first gate structure and the second gate structure are exposed.
A manufacturing method of a semiconductor device, said semiconductor device comprising a first MISFET in a first region of a semiconductor substrate and a second MISFET in a second region of the semiconductor substrate, said manufacturing method comprising the steps of:
- (a) preparing the semiconductor substrate;
- (b) after the step (a), respectively forming a first gate structure for the first MISFET over the semiconductor substrate in the first region, and a second gate structure for the second MISFET over the semiconductor substrate in the second region;
- (c) after the step (b), forming a protective film over the semiconductor substrate so as to cover the first gate structure and the second gate structure;
- (d) after the step (c), forming a first material film comprised of a material different from that of the protective film over the protective film so as to cover the first gate structure and the second gate structure;
- (e) after the step (d), forming a first mask layer covering the second region and exposing the first region, over the first material film;
- (f) after the step (e), performing first ion implantation on the semiconductor substrate in the first region using the first mask layer as an ion implantation blocking mask;
- (g) after the step (f), removing the first mask layer;
- (h) after the step (g), removing the first material film to leave the protective film;
- (i) after the step (h), forming a second material film comprised of a material different from that of the protective film over the protective film so as to cover the first gate structure and the second gate structure;
- (j) after the step (i), forming a second mask layer covering the first region and exposing the second region, over the first material film;
- (k) after the step (j), performing second ion implantation on the semiconductor substrate in the second region using the second mask layer as another ion implantation mask;
- and
- (l) after the step (k), removing the second mask layer,
- wherein each of the first gate structure and the second gate structure includes a gate insulating film and a gate electrode formed over the gate insulating film, and
- wherein in the step (h), the protective film is exposed, while sides of the first gate structure and the second gate structure are not exposed.
Dependencies are inferred from the claim text.