Semiconductor substrate, semiconductor device, and manufacturing methods thereof
AssigneeSeoul Opto Device Co., Ltd.
InventorShiro Sakai
Life of this patent
Estimating the term…
Abstract
Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.
Claims14
A method of fabricating a light emitting device using a recycled substrate, the method comprising:
- forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer;
- disposing a second substrate on the plurality of compound semiconductor layers;
- separating the first substrate from the plurality of semiconductor layers at the first semiconductor layer, thereby exposing a first surface of the first semiconductor layer;
- and
- flattening the first surface of the first semiconductor layer,
- wherein separating the first substrate from the plurality of semiconductor layers comprises:
- forming a plurality of cavities in the first semiconductor layer;
- and
- etching the first semiconductor layer to increase the volume of each of the plurality of the cavities.
Dependencies are inferred from the claim text.