Photoresist composition, resist-pattern forming method, polymer, and compound
AssigneeJsr Corporation
InventorsMitsuo SATO, Masafumi Yoshida
Life of this patent
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AssigneeJsr Corporation
InventorsMitsuo SATO, Masafumi Yoshida
Estimating the term…
A photoresist composition includes a polymer that includes a structural unit shown by the following formula (1), and a photoacid generator. R1 in the formula (1) represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z represents a group that forms a divalent alicyclic group having 3 to 20 carbon atoms together with a carbon atom bonded to X, X represents an alkanediyl group having 1 to 6 carbon atoms, Y represents a hydrogen atom or —CR2R3(OR4), and R2 to R4 independently represent a hydrogen atom or a monovalent hydrocarbon group, provided that R3 and R4 optionally bond to each other to form a cyclic ether structure together with a carbon atom bonded to R3 and an oxygen atom bonded to R4.
A photoresist composition comprising a polymer that includes a structural unit shown by a formula (1), and a photoacid generator,
A polymer comprising a structural unit shown by a formula (1),
A compound shown by a formula (i),
Dependencies are inferred from the claim text.