# US 2012/0258401 A1 · Resist composition and method for producing resist pattern

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- Number: US 2012/0258401 A1
- Document ID: US20120258401A1
- Status: Published application
- Kind: A1
- Application number: 13/441,032
- Filed: 2012-04-06
- Published: 2012-10-11
- Earliest claimed: 2011-04-07
- Assignees: Sumitomo Chemical Company, Limited
- Inventors: Koji ICHIKAWA; Takahiro YASUE; Yuichi MUKAI
- Web page: https://patentgrep.com/patent/US20120258401A1

## CPC

- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/029: Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/092: {characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A resist composition contains (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1 and R2, m and n, R3 and R4, X1, R5 and Z1+ are defined in the specification.

## Claims

### Claim 1

A resist composition comprising
(A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid,
(B) an acid generator represented by the formula (II), and
(D) a compound represented by the formula (I),
wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom;
m and n independently represent an integer of 0 to 4;
wherein R3 and R4 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group;
X1 represents an C1 to C17 divalent saturated hydrocarbon group, and one or more hydrogen atom contained in the divalent saturated hydrocarbon group may be replaced by a fluorine atom, one or more —CH2— contained in the divalent saturated hydrocarbon group may be replaced by —O— or —CO—;
R5 represents a group having cyclic ether structure; and
Z1+ represents an organic cation.

### Claim 2 (depends on 1)

The resist composition according to claim 1, wherein R5 in the formula (II) is a group represented by the formula (IIA) or the formula (IIE).
wherein s1 represents an integer of 1 to 4,
t1 represents an integer of 0 to 2,
provided that s1+t1 represents an integer of 1 to 4;
s11 represents an integer of 1 to 4,
t11 represents an integer of 0 to 2;
s12 represents an integer of 1 to 4,
t12 represents an integer of 0 to 2,
provided that s12+t12 represents an integer of 0 to 4;
R6 in each occurrence represents a C1 to C12 saturated hydrocarbon group, a C6 to C18 aromatic hydrocarbon group, or two R6 are bonded together to form a ring, and one or more hydrogen atoms contained in the saturated hydrocarbon group, the aromatic hydrocarbon group and the ring may be replaced by a C1 to C6 alkyl group or a nitro group, and one or more —CH2— contained in the saturated hydrocarbon group and ring may be replaced by —O—;
u1 represents an integer of 0 to 8;
R7 and R8 in each occurrence independently represent a hydroxy group, a halogen atom, a C1 to C6 alkyl group, a C1 to C6 alkoxyl group, a C1 to C6 hydroxy alkyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group or a C2 to C7 acylamino group, or two of R7 and/or R8 may be bonded together to form a single bond or a ring;
u2 and u3 independently represent an integer of 0 to 16;
* represent a bond to X1.

### Claim 3 (depends on 1)

The resist composition according to claim 1, which further comprises a solvent.

### Claim 4 (depends on 1)

A method for producing a resist pattern comprising steps of;
(1) applying the resist composition of claim 1 onto a substrate;
(2) drying the applied composition to form a composition layer;
(3) exposing the composition layer;
(4) heating the exposed composition layer, and
(5) developing the heated composition layer.