Increasing etch selectivity of carbon films with lower absorption co-efficient and stress
AssigneeNovellus Systems, Inc.
InventorsSirish Reddy, Alice Hollister, Pramod Subramonium, Jon Henri, Chunhai Ji, Zhi Yuan Fang
Life of this patent
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Abstract
A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
Claims32
A method for depositing a film, comprising:
- arranging a substrate in a plasma enhanced chemical vapor deposition chamber;
- depositing a first ashable hardmask (AHM) layer that is carbon-based on the substrate;
- and
- during the depositing of the first AHM layer, doping with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide,
- wherein an atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
A method for depositing a film, comprising:
- arranging a substrate in a plasma enhanced chemical vapor deposition chamber;
- depositing a layer on the substrate;
- depositing a first ashable hardmask (AHM) layer on the layer;
- depositing a second AHM layer that is carbon-based on the first AHM layer;
- and
- during the depositing of the second AHM layer, doping with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide,
- wherein an atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer and second AHM layer.
A substrate processing system, comprising:
- a plasma enhanced chemical vapor deposition (PECVD) chamber;
- a showerhead arranged in the chamber;
- a pedestal arranged in the chamber to support a substrate;
- a controller comprising instructions for:
- depositing a first ashable hardmask (AHM) layer on the substrate;
- and
- during the depositing of the first AHM layer, doping with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide,
- wherein an atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
Dependencies are inferred from the claim text.