Temperature sensor
AssigneeHynix Semiconductor Inc.
InventorsHyun Sik JEONG, Saeng Hwan KIM
Life of this patent
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Abstract
A temperature sensor includes: a gate voltage generation unit including a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage; and a variable voltage output unit including an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage.
Claims16
A temperature sensor which compares a reference voltage having a constant level according to temperature change with a variable voltage having a variable level according to temperature change and generates a temperature signal, comprising:
- a gate voltage generation unit comprising a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage, wherein resistance changes of the bias resistor and the first source resistor based on temperature change are offset by each other, and slope change of the gate voltage based on the temperature change is determined according to a threshold voltage of the first MOS transistor;
- and
- a variable voltage output unit comprising an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage, wherein resistance changes of the output resistor and the second source resistor based on temperature change are offset by each other, and slope change of the variable voltage based on the temperature change is determined according to a threshold voltage of the second MOS transistor.
A temperature sensor which compares a reference voltage having a constant level according to temperature change with a variable voltage having a variable level according to temperature change and generates a temperature signal, comprising:
- a gate voltage generation unit comprising a bias resistor having a resistance value set by a test mode or fuse cutting, a first source resistor, and a first MOS transistor and configured to generate a gate voltage, wherein resistance changes of the bias resistor and the first source resistor based on temperature change are offset by each other, and slope change of the gate voltage based on the temperature change is determined according to a threshold voltage of the first MOS transistor;
- and
- a variable voltage output unit comprising an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage, wherein resistance changes of the output resistor and the second source resistor based on temperature change are offset by each other, and slope change of the variable voltage based on the temperature change is determined according to a threshold voltage of the second MOS transistor.
A temperature sensor comprising:
- a bias resistor connected to a supply voltage source;
- a first NMOS transistor connected between the bias resistor and a first source resistor connected to a ground voltage source;
- an output resistor connected to the supply voltage source;
- and
- a second NMOS transistor connected between the output resistor and a second source resistor connected to the ground voltage source, wherein the gate of the second NMOS transistor is connected to the bias resistor and the first NMOS transistor.
Dependencies are inferred from the claim text.