Method of testing a semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Beom KIM, Hyun-Soon JANG
Life of this patent
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Abstract
A method of testing a semiconductor memory device includes writing first data to a memory cell array in the semiconductor memory device, loading second data from the memory cell array onto a plurality of data pads of the semiconductor memory device, rewriting the second data to the memory cell array, and outputting test result data through one or more test pads. The first data is received from an external device through the one or more test pads, which correspond to one or more of the plurality of data pads. The test result data is based on the rewritten data in the memory cell array.
Claims20
A method of testing a semiconductor memory device, comprising:
- writing first data to a memory cell array in the semiconductor memory device, wherein the first data is received from an external device through one or more test pads, and the one or more test pads correspond to one or more of a plurality of data pads of the semiconductor memory device;
- loading second data from the memory cell array onto the plurality of data pads;
- rewriting the second data on the plurality of data pads to the memory cell array;
- and
- outputting test result data through the test pads based on the rewritten data in the memory cell array.
A semiconductor memory device, comprising:
- a data pad unit comprising a plurality of data pads;
- and
- a memory cell array,
- wherein the semiconductor memory device is configured to receive first data from an external device via one or more test pads corresponding to one or more of the plurality of data pads, write the first data to the memory cell array, load second data from the memory cell array onto the plurality of data pads, rewrite the second data on the plurality of data pads to the memory cell array, and output test result data based on the rewritten data.
Dependencies are inferred from the claim text.