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US 2012/0257445 A1Published application
Nonvolatile memory apparatus having magnetoresistive memory elements and method for driving the same
AssigneeHynix Semiconductor Inc.
InventorSung Yeon LEE
Life of this patent
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Abstract
A semiconductor memory apparatus includes a source line, a first bit line disposed over the source line, a second bit line disposed under the source line, a first memory cell between the source line and the first bit line, and a second memory cell between the source line and the second bit line.
Claims25
A semiconductor memory apparatus comprising:
- a source line;
- a first bit line disposed over the source line;
- a second bit line disposed under the source line;
- a first memory cell between the source line and the first bit line;
- and
- a second memory cell between the source line and the second bit line.
3 more elements
A semiconductor memory apparatus comprising:
- a source line;
- a mode selection unit configured to selectively provide a voltage to the source line according to a write or read mode;
- a cell switching element coupled to the source line;
- a first memory cell coupled between the cell switching element and a bit line;
- and
- a second memory cell coupled between the cell switching element and a bit line bar, wherein voltage of the bit line bar is complementary to the voltage of the bit line, and
- wherein the source line is between the first and second memory cells.
4 more elements
A method for driving a semiconductor memory apparatus, comprising the steps of:
- charging a source line with a first voltage level;
- applying a second voltage level to a first bit line electrically coupled to a first memory cell positioned over the source line, wherein the second voltage level is complementary to the first voltage level;
- applying the first voltage level to a second bit line electrically coupled to a second memory cell positioned under the source line;
- and
- using one memory cell selected from the first and second memory cells as a reference cell, and sensing data stored in the other memory cell.
2 more elements
A method for driving a semiconductor memory apparatus, comprising the steps of:
- charging a source line to a first voltage level;
- applying one of the first voltage level and a second voltage level to a first bit line coupled to a first memory cell positioned over the source line, wherein the second voltage level is complementary to the first voltage level;
- applying a voltage level that is complementary to the voltage level of the first bit line to a second bit line coupled to a second memory cell positioned under the source line;
- and
- sensing values stored in the first and second memory cells from currents corresponding to the first and second memory cells.
2 more elements
Dependencies are inferred from the claim text.