Method for processing a semiconductor wafer or die, and particle deposition device
AssigneeInfineon Technologies AG
InventorsManfred Engelhardt, Hans-Joerg Timme, Ivan Nikitn, Manfred Frank, Thomas Kunstmann, Werner Robl, Guenther Ruhl
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Abstract
According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
Claims25
A method for processing a semiconductor wafer or die comprising
- supplying particles to a plasma such that the particles are activated by the plasma;
- spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.
A semiconductor wafer or die having a porous reinforcement layer, wherein the porosity is between 5%-50%.
A particle deposition device comprising:
- a first supplying part supplying a plasma jet to a reaction chamber;
- a second supplying part supplying a carrier gas to the reaction chamber;
- the reaction chamber for mixing the plasma jet and the carrier gas to generate a mixture,
- wherein the reaction chamber comprises an outlet to emit the mixture;
- a conducting channel having a first end formed by the outlet and having a second end formed by at least one aperture of the particle deposition device having the form of an interconnect structure to be deposited on a carrier.
Dependencies are inferred from the claim text.