Solder ball contact susceptible to lower stress

A method of manufacturing a solder ball contact, said method comprising:

• forming a first insulating layer on an integrated circuit (IC) chip and on a metal pad, said first insulating layer including a via to said metal pad;
• forming an under bump metallurgy (UBM) structure on sides of said via, on a top surface of said metal pad, and on a portion of a top surface of said first insulating layer, surrounding said via;
• forming a second insulating layer on an upper surface of an outer portion of said UBM structure, surrounding said via;
• and
• forming a solder ball that fills said via and is disposed above an upper surface of an inner portion of said UBM structure, surrounding said via.

A method of manufacturing a solder ball contact, said method comprising:

• forming, sequentially, a base layer, a conductive layer, and a second insulating layer over a first insulating layer, said first insulating layer including a first via to a metal pad formed on an integrated circuit (IC) chip;
• forming a first photoresist, including a second via centered on and having a greater diameter than said first via, to expose a first portion of said second insulating layer within said first and second vias;
• removing said first portion of said second insulating layer;
• forming a barrier layer on said conductive layer within said first and second vias;
• forming a solder contact on said barrier layer within said first and second vias;
• removing said first photoresist;
• forming a second photoresist on said solder contact and a second portion of said second insulating layer that surrounds said solder contact;
• removing said second insulating layer, said conductive layer, and said base layer not covered by said second photoresist;
• removing said second photoresist to expose said solder contact, which overlies an under bump metallurgy (UBM) structure comprising said barrier layer, said conductive layer, and said base layer;
• and
• reflowing said solder contact to form a solder ball contact.

A method of manufacturing a solder ball contact, said method comprising:

• depositing and patterning a first insulating layer on an integrated circuit (IC) chip and a metal pad, said first insulating layer including a first via to said metal pad;
• depositing a base layer on said first insulating layer, including sides of said first via, and on a top surface of said metal pad;
• forming a conductive layer on said base layer;
• depositing a second insulating layer on said conductive layer;
• depositing and patterning a first photoresist to include a second via that shares a central axis with and has a greater diameter than said first via, said second via exposing a first portion of said second insulating layer located within said first and second vias;
• removing said first portion of said second insulating layer;
• forming a barrier layer on said conductive layer within said first and second vias;
• forming a solder contact on said barrier layer within said first and second vias;
• removing said first photoresist;
• depositing and patterning a second photoresist above said solder contact and a second portion of said second insulating layer that surrounds said solder contact;
• removing said second insulating layer, said conductive layer, and said base layer not covered by said second photoresist;
• removing said second photoresist to expose said solder contact, which overlies an under bump metallurgy (UBM) structure comprising said barrier layer, said conductive layer, and said base layer;
• and
• reflowing said solder contact to form a solder ball contact.